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MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
QM200HC-M
* * * *
IC Collector current ........................ 200A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 100 Non-Insulated Type
APPLICATION Robotics, Welders, Forklifts, Golf cart
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
5.4 E B BX E
35.5 15
C B
8 12 12 67.5 80 92.2 22
14 E BX E
M4
M6
LABEL
4.5
(28)
26
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 200 200 830 6 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute B(E) terminal screw M4 -- 0.98~1.47 10~15 0.98~1.47 10~15 1.96~2.94 20~30 1.47~1.96 15~20 200 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g
BX terminal screw M4 -- Mounting torque Main terminal screw M6
Mounting screw M5 -- Weight Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=350V, VEB=2V VCB=400V, Emitter open VEB=10V IC=200A, IB=2A -IC=200A (diode forward voltage) IC=200A, VCE=2V Min. -- -- -- -- -- -- 100 -- VCC=200V, IC=200A, IB1=-IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 400 2.0 2.5 1.5 -- 2.0 10 3.0 0.15 0.25 0.07 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
400 Tj=25C 10 3 7 5 4 3 2 VCE=2.0V 10 2 7 5 4 3 2 10 1
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
360 320 280 240 200 160 120 80 40 0 0
VCE=5.0V
IB=2.0A IB=1.0A IB=0.4A IB=0.2A
DC CURRENT GAIN hFE
IB=4.0A
Tj=25C Tj=125C 5 7 10 1 2 3 4 5 7 10 2 2 3 45
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.5 1.7 1.9 2.1 2.3 2.5 VCE=2.0V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
10 0 7 5 VCE(sat) 4 3 IB=2.0A 2 Tj=25C Tj=125C 10 -1 4 5 7 10 1 2 3 4 5 7 10 2
2 34
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 2 3 4 5 7 10 2
ton, ts, tf (s)
4
ts ton
IC=200A
3
SWITCHING TIME
tf
2 IC=100A 1 IC=50A IC=150A Tj=25C Tj=125C
0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
VCC=200V IB1=-IB2=4.0A Tj=25C Tj=125C 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
2
REVERSE BIAS SAFE OPERATING AREA
400
COLLECTOR CURRENT IC (A)
ts, tf (s)
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2
350 300 250
Tj=125C
ts
IB2=-4A 200 150 100 50 0 0 50 100 150 200 250 300 350 400
tf VCC=200V IC=200A IB1=4A Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 TC =25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 3 2 100 100s 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
50
0 20 s 1m s m s
10
s
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.20
0.18 0.16
D C
VCE (V)
80 100 120 140 160
CASE TEMPERATURE
TC (C)
10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
Tj=25C Tj=125C
Zth (j-c) (C/ W)
0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 2000
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 Irr (A), Qrr (c) 10 2 7 5 3 2 10 1 7 5 3 2 10 2 VCC=200V IB1=-IB2=4A Tj=25C Tj=125C 10 1 trr (s) 10 0
Feb.1999
1600
1200
Irr Qrr trr
800
400
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 0.40 0.36 0.32 Zth (j-c) (C/ W) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s)

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